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A 0.60 um film of silicon dioxide is to be etched with a buffered oxide etchant of etch rate 750 A min-1. Process data shows that the thickness may vary up to 10% and the etch rate may vary up to 15%.
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Andy Somody 97300-6222 ENSC 495 Assignment #3 6-1). a). A 0.60 um film of silicon dioxide is to be etched with a buffered oxide etchant of etch rate 750 A min-1. Process data shows that the thickness may vary up to 10% and the etch rate may vary up to 15%. The maximum possible thickness of the silicon dioxide film is therefore 110% of its nominal value. Therefore, the maximum possible thickness of the silicon dioxide film can be determined through the following calculation: where zmax is the maximum possible thickness of the silicon dioxide film and znominal is the nominal thickness of the silicon dioxide film. Therefore, znominal = 0.60 um. Any number expressed as a percentage can alternatively be expressed as a decimal. For example, 110% can be expressed as 1.1. Using this decimal format, the above formula can be rewritten in the following manner: Substituting our previously determined value for znominal into the above...
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